The influence of Ti doping and post-deposition annealing on the network properties of Ti-doped GeO2 coatings for gravitational-wave detectors
Fourier Transformed Infrared and X-ray Photoelectron spectroscopies of amorphous GeO 2 doped with Ti reveal the evolution of the atomic network formed by Ge-O-Ge, Ti-O-Ti and Ti-O-Ge linkages in mixtures with different Ti content and with annealing. It is shown the atomic network configuration affects the onset of crystallization.
Authors
- A.S. Markosyan (ORCID: https://orcid.org/0000-0002-1510-3075)
- Carmen S. Menoni (ORCID: https://orcid.org/0000-0001-9185-2572)
- Ruth Osovsky
- Sangita Bhowmick
- M. Chicoine (ORCID: https://orcid.org/0000-0003-0630-3996)
- M. M. Fejer (ORCID: https://orcid.org/0000-0002-5512-1905)
- F. Schiettekatte (ORCID: https://orcid.org/0000-0002-2112-9378)
- Samuel Castro Lucas
Institutions
- Israel Institute for Biological Research (IL)
- Université de Montréal (CA)
- Colorado State University (US)
- Stanford University (US)
Publication Details
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1364/oic.2025.fa.5
- Primary Topic
- Geophysics and Sensor Technology
- Type
- article
- Field-Weighted Citation Impact
- 0.00