Luminescent AlN Semiconductor Nanocrystals
Aluminum nitride III‐V semiconductor nanoparticles are prepared in the liquid phase via a two‐step synthesis. In a first step, a mixed amide‐imide intermediate is prepared in liquid ammonia. In a second step, the ammonolysis is completed by microwave heating at 300 °C in [BMIm][NTf 2 ] as an ionic liquid to obtain crystalline β‐AlN, which is usually known as a high‐pressure phase. The nanoparticles have a size of 3.7 ± 0.7 nm. Particle size and chemical composition are examined by transmission electron microscopy, energy‐dispersive X‐ray spectroscopy, infrared spectroscopy, and X‐ray powder diffraction. According to UV–vis spectroscopy and a Tauc plot, a bandgap of 5.2 eV is determined. The AlN nanoparticles show photoluminescence with bluish white emission and a quantum yield of 15%, which is a typical value for core‐type semiconductor nanoparticles without a protecting shell. A liquid‐phase synthesis of crystalline AlN nanoparticles (<10 nm) showing visible emission at room temperature is reported for the first time.
Authors
- Radian Popescu (ORCID: https://orcid.org/0000-0002-4954-0716)
- Claus Feldmann (ORCID: https://orcid.org/0000-0003-2426-9461)
- Dagmar Gerthsen (ORCID: https://orcid.org/0000-0003-2406-5805)
- Frédéric Jung
- Hannah F. Gaiser (ORCID: https://orcid.org/0009-0005-5234-2680)
- Matthias Steurer
Institutions
- Karlsruhe Institute of Technology (DE)
Publication Details
- Journal
- ChemNanoMat
- Published
- 2025-07-21
- DOI
- https://doi.org/10.1002/cnma.202500230
- Citations
- 1
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 1.26
Funders
- Deutsche Forschungsgemeinschaft