Luminescent AlN Semiconductor Nanocrystals

Aluminum nitride III‐V semiconductor nanoparticles are prepared in the liquid phase via a two‐step synthesis. In a first step, a mixed amide‐imide intermediate is prepared in liquid ammonia. In a second step, the ammonolysis is completed by microwave heating at 300 °C in [BMIm][NTf 2 ] as an ionic liquid to obtain crystalline β‐AlN, which is usually known as a high‐pressure phase. The nanoparticles have a size of 3.7 ± 0.7 nm. Particle size and chemical composition are examined by transmission electron microscopy, energy‐dispersive X‐ray spectroscopy, infrared spectroscopy, and X‐ray powder diffraction. According to UV–vis spectroscopy and a Tauc plot, a bandgap of 5.2 eV is determined. The AlN nanoparticles show photoluminescence with bluish white emission and a quantum yield of 15%, which is a typical value for core‐type semiconductor nanoparticles without a protecting shell. A liquid‐phase synthesis of crystalline AlN nanoparticles (<10 nm) showing visible emission at room temperature is reported for the first time.

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Publication Details

Journal
ChemNanoMat
Published
2025-07-21
DOI
https://doi.org/10.1002/cnma.202500230
Citations
1
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
1.26

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Luminescent AlN Semiconductor Nanocrystals

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article

Luminescent AlN Semiconductor Nanocrystals

Radian Popescu, Claus Feldmann, Dagmar Gerthsen, Frédéric Jung, Hannah F. Gaiser, Matthias Steurer
article en
1 citations

Abstract

Aluminum nitride III‐V semiconductor nanoparticles are prepared in the liquid phase via a two‐step synthesis. In a first step, a mixed amide‐imide intermediate is prepared in liquid ammonia. In a second step, the ammonolysis is completed by microwave heating at 300 °C in [BMIm][NTf 2 ] as an ionic liquid to obtain crystalline β‐AlN, which is usually known as a high‐pressure phase. The nanoparticles have a size of 3.7 ± 0.7 nm. Particle size and chemical composition are examined by transmission electron microscopy, energy‐dispersive X‐ray spectroscopy, infrared spectroscopy, and X‐ray powder diffraction. According to UV–vis spectroscopy and a Tauc plot, a bandgap of 5.2 eV is determined. The AlN nanoparticles show photoluminescence with bluish white emission and a quantum yield of 15%, which is a typical value for core‐type semiconductor nanoparticles without a protecting shell. A liquid‐phase synthesis of crystalline AlN nanoparticles (<10 nm) showing visible emission at room temperature is reported for the first time.

ChemNanoMatVol. 11(10)
Karlsruhe Institute of Technology (DE)
Deutsche Forschungsgemeinschaft
Openalex Percentile: Top 19%
GaN-based semiconductor devices and materials
1.26
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