Straightforward Method to Orient Black Phosphorus from Bulk to Thin Layers using a Standard Green Laser

The crystallographic orientation of anisotropic 2D materials plays a crucial role in their physical properties and device performance. However, standard orientation techniques such as transmission electron microscopy (TEM) or X‐ray diffraction can be complex and less accessible for routine characterization. Herein, the orientation of black phosphorus (BP) from bulk crystals to thin layers is investigated using angle‐resolved polarized Raman spectroscopy with a single‐wavelength (514 nm) Raman setup. By incorporating thickness‐dependent interference effects and anisotropic optical indices, this approach provides a reliable framework for orientation determination across different BP thicknesses. The method is validated through direct orientation measurements using TEM and electron backscattering diffraction, confirming its applicability to both thick and ultrathin samples. Given its simplicity and compatibility with widely available Raman setups, this approach offers a practical solution for characterizing BP orientation without requiring advanced structural characterization techniques.

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Publication Details

Journal
ChemNanoMat
Published
2025-07-21
DOI
https://doi.org/10.1002/cnma.202500182
Citations
1
Primary Topic
Advanced Fiber Laser Technologies
Type
article
Field-Weighted Citation Impact
1.25

Funders

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article

Straightforward Method to Orient Black Phosphorus from Bulk to Thin Layers using a Standard Green Laser

Étienne Gaufrès, Florian Godel, Julien Barjon, Frédéric Fossard et al.
1 citations
ChemNanoMat
Advanced Fiber Laser Technologies
1.25
article

Straightforward Method to Orient Black Phosphorus from Bulk to Thin Layers using a Standard Green Laser

Étienne Gaufrès, Florian Godel, Julien Barjon, Frédéric Fossard, Pierre Sénéor, Ingrid Stenger, Nicolas Horezan, Jean‐Sébastien Mérot, Victor Zatko, Etienne Carré, Denis Boivin, Annick Loiseau, Bruno Dlubak, Marie‐Blandine Martin
article en
1 citations

Abstract

The crystallographic orientation of anisotropic 2D materials plays a crucial role in their physical properties and device performance. However, standard orientation techniques such as transmission electron microscopy (TEM) or X‐ray diffraction can be complex and less accessible for routine characterization. Herein, the orientation of black phosphorus (BP) from bulk crystals to thin layers is investigated using angle‐resolved polarized Raman spectroscopy with a single‐wavelength (514 nm) Raman setup. By incorporating thickness‐dependent interference effects and anisotropic optical indices, this approach provides a reliable framework for orientation determination across different BP thicknesses. The method is validated through direct orientation measurements using TEM and electron backscattering diffraction, confirming its applicability to both thick and ultrathin samples. Given its simplicity and compatibility with widely available Raman setups, this approach offers a practical solution for characterizing BP orientation without requiring advanced structural characterization techniques.

ChemNanoMatVol. 11(9)
Centre National de la Recherche Scientifique (FR), Université de Bordeaux (FR), Université de Versailles Saint-Quentin-en-Yvelines (FR), Université Paris-Saclay (FR), Groupe d’Étude de la Matière Condensée (FR), Laboratoire Albert Fert (FR), Laboratoire d'Étude des Microstructures (FR), Laboratoire Photonique, Numérique et Nanosciences (FR)
Graphene Flagship, Agence Nationale de la Recherche
Openalex Percentile: Top 19%
Advanced Fiber Laser Technologies
1.25
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