Ringing Noise Reduction Method for High‐Speed GaN Switching Converter

The noise reduction circuit for decreasing the ringing voltage peaks in the switching converter with GaN‐based high electron mobility transistors is proposed. First, the location of the stray inductance generating the ringing noise is investigated using radiated emission measurements with the electromagnetic probe, and the additional capacitor is inserted into the circuit in parallel with the stray inductance. At the supply voltage of 12 V and the switching frequency of 1 MHz, the noise peak voltage can be suppressed by about 18%. In addition, by calculating the switching waveforms using SPICE‐based simulation, the effect of the noise reduction circuit agrees well with the experimental results.