Identifying the Limits of Strain Engineering in NaNbO<sub>3</sub> Ultrathin Films

Epitaxial NaNbO<sub>3</sub> ultrathin films are grown on single-crystal substrates with a wide range of compressive (-6.24%) and tensile (+7.13%) strain. High-resolution X-ray diffraction reveals a coherently strained state of NaNbO<sub>3</sub> thin films within the strain range from -1.42 to 1.86%, beyond which the films are in relaxed states. This is accompanied by a change in the growth mode from step-flow growth in strained films to coalesced island growth in relaxed films. Piezoresponse force microscopy measurements, including domain writing and reading, reveal a single vertical ferroelectric domain for the compressive films, while the tensile films exhibit a mixture of multiple vertical domains. The first-principles calculations confirm the stability of strained NaNbO<sub>3</sub>. Our results provide important information for the understanding and engineering of strained functional thin films.

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Publication Details

Journal
ACS Applied Materials & Interfaces
Published
2025-07-16
DOI
https://doi.org/10.1021/acsami.5c09069
Citations
1
Primary Topic
Ferroelectric and Piezoelectric Materials
Type
article
Field-Weighted Citation Impact
0.52

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article

Identifying the Limits of Strain Engineering in NaNbO3 Ultrathin Films

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1 citations
ACS Applied Materials & Interfaces
Ferroelectric and Piezoelectric Materials
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article

Identifying the Limits of Strain Engineering in NaNbO3 Ultrathin Films

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article en
1 citations

Abstract

Epitaxial NaNbO<sub>3</sub> ultrathin films are grown on single-crystal substrates with a wide range of compressive (-6.24%) and tensile (+7.13%) strain. High-resolution X-ray diffraction reveals a coherently strained state of NaNbO<sub>3</sub> thin films within the strain range from -1.42 to 1.86%, beyond which the films are in relaxed states. This is accompanied by a change in the growth mode from step-flow growth in strained films to coalesced island growth in relaxed films. Piezoresponse force microscopy measurements, including domain writing and reading, reveal a single vertical ferroelectric domain for the compressive films, while the tensile films exhibit a mixture of multiple vertical domains. The first-principles calculations confirm the stability of strained NaNbO<sub>3</sub>. Our results provide important information for the understanding and engineering of strained functional thin films.

ACS Applied Materials & InterfacesVol. 17(30)
Agency for Science, Technology and Research (SG), National University of Singapore (SG), Nanyang Technological University (SG), Institute of High Performance Computing (SG), Fracture Analysis Consultants (United States) (US), Institute of Materials Research and Engineering (SG)
Agency for Science, Technology and Research, National Research Foundation Singapore, Ministry of Education - Singapore
Openalex Percentile: Top 36%
Ferroelectric and Piezoelectric Materials
0.52
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