Design and Analysis of GaN Based Electronic Power Conditioner for Space Applications

This paper presents the design and analysis of a forward converter-based multi-output topology utilizing Gallium Nitride (GaN) power devices for Electronic Power Conditioner (EPC) applications in space systems. The proposed topology is tailored for high-frequency operation, leveraging the superior switching characteristics of GaN devices to achieve improved efficiency. To further minimize conduction losses, synchronous rectification is implemented across the point-of-load (POL) converters associated with each output stage. A comprehensive magnetic design approach is explained to support efficient energy transfer in a compact multi-output configuration. The work includes detailed loss analysis based on real GaN device parameters, offering insights into both switching and conduction losses. Simulation results are used to validate the theoretical analysis, providing steady-state waveforms that demonstrate the functional integrity and high efficiency of the proposed converter. This research supports the viability of GaN-based forward converters as a compelling solution for next-generation space power electronics.

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Publication Details

Published
2025-06-18
DOI
https://doi.org/10.1109/pectea61788.2025.11076322
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.00

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article

Design and Analysis of GaN Based Electronic Power Conditioner for Space Applications

U. Vinatha, M. M. Rajan Singaravel, B. Venkatesaperumal, Vishal Kumar et al.
GaN-based semiconductor devices and materials
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Design and Analysis of GaN Based Electronic Power Conditioner for Space Applications

U. Vinatha, M. M. Rajan Singaravel, B. Venkatesaperumal, Vishal Kumar, Nikhil Desai, L R Indhuja
article en

Abstract

This paper presents the design and analysis of a forward converter-based multi-output topology utilizing Gallium Nitride (GaN) power devices for Electronic Power Conditioner (EPC) applications in space systems. The proposed topology is tailored for high-frequency operation, leveraging the superior switching characteristics of GaN devices to achieve improved efficiency. To further minimize conduction losses, synchronous rectification is implemented across the point-of-load (POL) converters associated with each output stage. A comprehensive magnetic design approach is explained to support efficient energy transfer in a compact multi-output configuration. The work includes detailed loss analysis based on real GaN device parameters, offering insights into both switching and conduction losses. Simulation results are used to validate the theoretical analysis, providing steady-state waveforms that demonstrate the functional integrity and high efficiency of the proposed converter. This research supports the viability of GaN-based forward converters as a compelling solution for next-generation space power electronics.

National Institute of Technology Karnataka (IN), National Institute of Technology Tiruchirappalli (IN), Indian Space Research Organisation (IN), ITPEnergised Group (India) (IN)
Space Applications Centre
Affordable and clean energy
Openalex Percentile: Top 89%
GaN-based semiconductor devices and materials
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