Switched Mode Power Amplifier for Underwater Imaging Sonar System

High-frequency signals are transmitted in imaging sonars for detection and achieving high-resolution images underwater. Si MOSFETs are not suitable for high-frequency applications because of their slow switching speed, higher parasitic capacitance, and lower efficiency. In contrast, Wide Band Gap(WBG) devices such as SiC and GaNFETs offer significant advantages in high-frequency sonar systems as they posses higher electron mobility, lower on-resistance, higher breakdown voltage, and better thermal management. Power amplifiers designed with WBG devices provided precision signal clarity and higher power efficiency. Switched Mode Power Amplifier(SMPA) made using GaN MOSFETs for imaging sonar is discussed in this paper. Simulation study was carried out using MATLAB / SIMULINK and hardware prototype of 100 W was developed. Simulation and hardware results are also presented in this paper.