Thermal and Reliability Analysis of a Dual-Switch Switched Inductor-Capacitor Network-Based High-Gain DC-DC Converter

This paper presents a comprehensive thermal and reliability analysis of a Dual-Switch Switched InductorCapacitor Network (DSSLCN)-based high-gain DC-DC converter. The converter topology is analysed under both Continuous Conduction Mode (CCM) and Discontinuous Conduction Mode (DCM), with detailed mathematical derivations for voltage gain and boundary conditions. A hardware prototype rated for $200 \mathrm{~W}, 400 \mathrm{~V}$, and 50 kHz switching frequency is developed to validate the analytical findings through experimental measurements. Loss analysis quantifies power dissipation in inductors, capacitors, switches, and diodes, identifying key sources of inefficiency. Thermal performance is evaluated under different load conditions (100 $\mathrm{W}, 200 \mathrm{~W}$, and 300 W), revealing the impact of power dissipation on component temperatures and highlighting the importance of thermal management. The reliability assessment employs an exponential failure rate model, incorporating voltage stress, thermal effects, and environmental factors to estimate component lifespan. The analysis demonstrates that higher duty ratios and prolonged operation accelerate MOSFET and diode degradation, reducing overall system reliability.

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Published
2025-06-18
DOI
https://doi.org/10.1109/pectea61788.2025.11076427
Primary Topic
Silicon Carbide Semiconductor Technologies
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article
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article

Thermal and Reliability Analysis of a Dual-Switch Switched Inductor-Capacitor Network-Based High-Gain DC-DC Converter

K. Sivasankaran, S. Vinu Varshath
Silicon Carbide Semiconductor Technologies
article

Thermal and Reliability Analysis of a Dual-Switch Switched Inductor-Capacitor Network-Based High-Gain DC-DC Converter

K. Sivasankaran, S. Vinu Varshath
article en

Abstract

This paper presents a comprehensive thermal and reliability analysis of a Dual-Switch Switched InductorCapacitor Network (DSSLCN)-based high-gain DC-DC converter. The converter topology is analysed under both Continuous Conduction Mode (CCM) and Discontinuous Conduction Mode (DCM), with detailed mathematical derivations for voltage gain and boundary conditions. A hardware prototype rated for $200 \mathrm{~W}, 400 \mathrm{~V}$, and 50 kHz switching frequency is developed to validate the analytical findings through experimental measurements. Loss analysis quantifies power dissipation in inductors, capacitors, switches, and diodes, identifying key sources of inefficiency. Thermal performance is evaluated under different load conditions (100 $\mathrm{W}, 200 \mathrm{~W}$, and 300 W), revealing the impact of power dissipation on component temperatures and highlighting the importance of thermal management. The reliability assessment employs an exponential failure rate model, incorporating voltage stress, thermal effects, and environmental factors to estimate component lifespan. The analysis demonstrates that higher duty ratios and prolonged operation accelerate MOSFET and diode degradation, reducing overall system reliability.

National Institute of Technology Calicut (IN)
Affordable and clean energy
Openalex Percentile: Top 84%
Silicon Carbide Semiconductor Technologies
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Thermal and Reliability Analysis of a Dual-Switch Switched Inductor-Capacitor Network-Based High-Gain DC-DC Converter — K. Sivasankaran, S. Vinu Varshath · (2025) | TGRS Research Map | TGRS