Thermal and Reliability Analysis of a Dual-Switch Switched Inductor-Capacitor Network-Based High-Gain DC-DC Converter
This paper presents a comprehensive thermal and reliability analysis of a Dual-Switch Switched InductorCapacitor Network (DSSLCN)-based high-gain DC-DC converter. The converter topology is analysed under both Continuous Conduction Mode (CCM) and Discontinuous Conduction Mode (DCM), with detailed mathematical derivations for voltage gain and boundary conditions. A hardware prototype rated for $200 \mathrm{~W}, 400 \mathrm{~V}$, and 50 kHz switching frequency is developed to validate the analytical findings through experimental measurements. Loss analysis quantifies power dissipation in inductors, capacitors, switches, and diodes, identifying key sources of inefficiency. Thermal performance is evaluated under different load conditions (100 $\mathrm{W}, 200 \mathrm{~W}$, and 300 W), revealing the impact of power dissipation on component temperatures and highlighting the importance of thermal management. The reliability assessment employs an exponential failure rate model, incorporating voltage stress, thermal effects, and environmental factors to estimate component lifespan. The analysis demonstrates that higher duty ratios and prolonged operation accelerate MOSFET and diode degradation, reducing overall system reliability.
Authors
- K. Sivasankaran
- S. Vinu Varshath
Institutions
- National Institute of Technology Calicut (IN)
Publication Details
- Published
- 2025-06-18
- DOI
- https://doi.org/10.1109/pectea61788.2025.11076427
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00