Design and Development of Isolated Space Grade DC-DC Converter for SSPA using eGaN FET and Analysis on the Role of Parasitic

The paper provides an insight into the design and development of GaN FET based isolated DC-DC converter, built as a potential substitute to Si based DC-DC converter already in use for space applications. The DC-DC in target here is used to power solid state power amplifier (SSPA) used in spacecraft. The paper highlights major achievements in different set of performance parameters as and when required. Apart from this, the paper also gives detailed analysis on the role of parasitic which become dominant at such high switching frequencies at which GaN FETs operate. Layout analysis and signal integrity have been discussed to optimize device performance. Practical hardware and simulation results have been included at required places to support the analysis. The aim here is also to highlight the thermal management of the device considering the size of the device. This paper also includes comparison of both the hardware results of switching power devices Si MOSFET and GaN FET to show efficacy of GaN FET.