Towards robust ultra-low k spin-on dielectric materials
We have incorporated a polymer-bound porogen into an organosiloxane polymer and investigated the impact of the polymerization process on the final material properties. This approach resulted in a promising combination of dielectric properties and a polymerization process that enhances the mechanical properties of the porous dielectric material. In addition, plasma damage was found to be comparable to that of porogen-free spin-on dielectric material, indicating potential compatibility with back-end-of-line integration processes.
Authors
- Jyri K. Paulasaari
- Thomas M. Gädda
- Juha Rantala
- Hanna Luusua
- Heli Kekkonen
- Amanda Ihalainen
Institutions
- Singapore University of Technology and Design (SG)
- DIARC-Technology (Finland) (FI)
Publication Details
- Published
- 2025-06-02
- DOI
- https://doi.org/10.1109/iitc66087.2025.11075509
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Business Finland
- HORIZON EUROPE European Innovation Council