Towards robust ultra-low k spin-on dielectric materials

We have incorporated a polymer-bound porogen into an organosiloxane polymer and investigated the impact of the polymerization process on the final material properties. This approach resulted in a promising combination of dielectric properties and a polymerization process that enhances the mechanical properties of the porous dielectric material. In addition, plasma damage was found to be comparable to that of porogen-free spin-on dielectric material, indicating potential compatibility with back-end-of-line integration processes.

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Publication Details

Published
2025-06-02
DOI
https://doi.org/10.1109/iitc66087.2025.11075509
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
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article

Towards robust ultra-low k spin-on dielectric materials

Jyri K. Paulasaari, Thomas M. Gädda, Juha Rantala, Hanna Luusua et al.
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Semiconductor materials and devices
article

Towards robust ultra-low k spin-on dielectric materials

Jyri K. Paulasaari, Thomas M. Gädda, Juha Rantala, Hanna Luusua, Heli Kekkonen, Amanda Ihalainen
article en

Abstract

We have incorporated a polymer-bound porogen into an organosiloxane polymer and investigated the impact of the polymerization process on the final material properties. This approach resulted in a promising combination of dielectric properties and a polymerization process that enhances the mechanical properties of the porous dielectric material. In addition, plasma damage was found to be comparable to that of porogen-free spin-on dielectric material, indicating potential compatibility with back-end-of-line integration processes.

Singapore University of Technology and Design (SG), DIARC-Technology (Finland) (FI)
Business Finland, HORIZON EUROPE European Innovation Council
Openalex Percentile: Top 84%
Semiconductor materials and devices
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