Design of an SPI interface based on ferroelectric memory
This paper presents a high-speed SPI interface design for ferroelectric memory (FRAM), optimized for embedded systems and IoT applications. The design integrates serial-to-parallel and parallel-to-serial conversion circuits, along with an opcode enable module, achieving a transmission rate of 25 Mbit/s. Functional simulations demonstrate reliable FRAM read/write operations and status register control. The modular architecture ensures high compatibility and scalability, making it suitable for various embedded storage applications. This work provides a robust solution for high-speed non-volatile memory and lays the foundation for future larger-capacity FRAM applications.
Authors
- Sili Zhou (ORCID: https://orcid.org/0000-0003-3319-3374)
- Shunyong Zhou (ORCID: https://orcid.org/0000-0002-8628-8476)
- Yunfeng Liu (ORCID: https://orcid.org/0000-0002-6851-8792)
- Huiqin Zhang (ORCID: https://orcid.org/0000-0003-3179-2066)
- R.P. Liu
- Hongxu Pu
Institutions
- PATH To Reading (US)
- Sichuan University of Science and Engineering (CN)
Publication Details
- Published
- 2025-07-16
- DOI
- https://doi.org/10.1117/12.3070589
- Citations
- 1
- Primary Topic
- Semiconductor Lasers and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.73