Pressure-induced electronic transition in vacancy-ordered halide double perovskite Cs2TeBr6

We report high-pressure x-ray diffraction, Raman scattering, photoluminescence, and absorption measurements on vacancy-ordered halide double perovskite Cs2TeBr6. An electronic transition becomes apparent at around 2.3 GPa, characterized by anomalous behavior in the normalized pressure as a function of the Eulerian strain, a broad minimum in Raman linewidth, and a slope change in the linear pressure variation of a Raman mode frequency. The large compressibility and the observed anomalies in Raman scattering suggest that the material is soft and exhibits a strong electron–phonon coupling. The broad emission below the bandgap is attributed to the recombination of self-trapped excitons. The Cs2TeBr6 crystal, consisting of undistorted octahedra, exhibits substantial emission enhancement and bandgap narrowing under pressure. The electronic transition is further supported by the observed emission maximum and a small kink in the pressure variation of the bandgap at around 2.3 GPa.

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Publication Details

Journal
Journal of Applied Physics
Published
2025-07-16
DOI
https://doi.org/10.1063/5.0273331
Citations
1
Primary Topic
Perovskite Materials and Applications
Type
article
Field-Weighted Citation Impact
0.73

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article

Pressure-induced electronic transition in vacancy-ordered halide double perovskite Cs2TeBr6

Goutam Dev Mukherjee, Asish Kumar Mishra, Suvashree Mukherjee, Sonu Pratap Chaudhary et al.
1 citations
Journal of Applied Physics
Perovskite Materials and Applications
0.73
article

Pressure-induced electronic transition in vacancy-ordered halide double perovskite Cs2TeBr6

Goutam Dev Mukherjee, Asish Kumar Mishra, Suvashree Mukherjee, Sonu Pratap Chaudhary, Sayan Bhattacharyya, Konstantin V. Glazyrin, Debabrata Samanta, Bhagyashri Giri
article en
1 citations

Abstract

We report high-pressure x-ray diffraction, Raman scattering, photoluminescence, and absorption measurements on vacancy-ordered halide double perovskite Cs2TeBr6. An electronic transition becomes apparent at around 2.3 GPa, characterized by anomalous behavior in the normalized pressure as a function of the Eulerian strain, a broad minimum in Raman linewidth, and a slope change in the linear pressure variation of a Raman mode frequency. The large compressibility and the observed anomalies in Raman scattering suggest that the material is soft and exhibits a strong electron–phonon coupling. The broad emission below the bandgap is attributed to the recombination of self-trapped excitons. The Cs2TeBr6 crystal, consisting of undistorted octahedra, exhibits substantial emission enhancement and bandgap narrowing under pressure. The electronic transition is further supported by the observed emission maximum and a small kink in the pressure variation of the bandgap at around 2.3 GPa.

Journal of Applied PhysicsVol. 138(3)
Indian Institute of Science Education and Research Kolkata (IN), Deutsches Elektronen-Synchrotron DESY (DE)
Ministry of Earth Sciences, Science and Engineering Research Board
Openalex Percentile: Top 26%
Perovskite Materials and Applications
0.73
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Pressure-induced electronic transition in vacancy-ordered halide double perovskite Cs2TeBr6 — Goutam Dev Mukherjee, Asish Kumar Mishra, et al. · Journal of Applied Physics (2025) | TGRS Research Map | TGRS