Irradiation Defects in Neutron-irradiated 6H-SiC: Thermodynamic and High-temperature Recovery Kinetics

Authors

Hongfei Liu (ORCID: https://orcid.org/0000-0003-4795-1113)
Bo Zhang (ORCID: https://orcid.org/0000-0003-1288-1549)
Xin Li (ORCID: https://orcid.org/0000-0001-9053-0643)
Fei Zhu (ORCID: https://orcid.org/0000-0001-5038-3191)
ZHANG Shouchao
HAO Xujie
ZHANG Quangui
YAN Xinyue
LIU Defeng
TUO Yayong

Publication Details

Journal: Journal of Inorganic Materials
Published: 2025-07-16
DOI: https://doi.org/10.15541/jim20250216
Primary Topic: Silicon Carbide Semiconductor Technologies
Type: article
Field-Weighted Citation Impact: 0.00

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article

Irradiation Defects in Neutron-irradiated 6H-SiC: Thermodynamic and High-temperature Recovery Kinetics

Hongfei Liu, Bo Zhang, Xin Li, Fei Zhu et al.

Jul 16, 2025

Journal of Inorganic Materials

Silicon Carbide Semiconductor Technologies

article

Irradiation Defects in Neutron-irradiated 6H-SiC: Thermodynamic and High-temperature Recovery Kinetics

Hongfei Liu, Bo Zhang, Xin Li, Fei Zhu, ZHANG Shouchao, HAO Xujie, ZHANG Quangui, YAN Xinyue, LIU Defeng, TUO Yayong

July 16, 2025article en

Abstract

No abstract available for this paper.

Journal of Inorganic MaterialsVol. 41(3)

Affordable and clean energy

Openalex Percentile: Top 85%

Silicon Carbide Semiconductor Technologies

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Irradiation Defects in Neutron-irradiated 6H-SiC: Thermodynamic and High-temperature Recovery Kinetics — Hongfei Liu, Bo Zhang, et al. · Journal of Inorganic Materials (2025) | TGRS Research Map | TGRS