GaN Bootstrapped Logic Gates Analytical Modeling and Design Insights

Following recent advancements, Gallium Nitride (GaN) technology continues to garner interest as a promising solution for future power electronics applications. Due to the variety of devices available in a monolithic GaN process, the development of digital circuits requires different topologies compared to CMOS technologies. This paper presents the analysis and design of logic gates from the bootstrapped family. Analytical equations for the static and dynamic parameters of an inverter are introduced. When compared to simulation results, these equations achieve a maximum error of 23.9% for static parameters and 33.3% for dynamic parameters. Additionally, different implementation details, such as developing other logic functions or enhancing the circuit behavior at system level, are proposed.