Preparation and Increased Photoelectrochemical Properties of Nanoporous GaN-Based ZnO Heterojunction

Nanoporous GaN-based ZnO heterojunctions (NP-GaN/ZnO) are obtained via electrochemical etching and pulsed laser deposition (PLD). NP-GaN/ZnO exhibits decreased stress and increased crystalline quality compared to as-grown GaN-based ZnO heterojunctions (AG-GaN/ZnO). Optical and electrochemical tests exhibit that NP-GaN/ZnO decreases the recombination efficiency of charge and increases the separation and transfer ability of charge. In addition, NP-GaN/ZnO shows a lower turn-on voltage, higher efficiency, and larger H2 production compared with AG-GaN/ZnO, which is ascribed to the lower polarization effect, as well as the increased light absorption region related to the narrowed band gap and the increased crystalline quality of NP-GaN/ZnO. Importantly, both samples show good stability.

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Publication Details

Journal
Crystal Growth & Design
Published
2025-07-16
DOI
https://doi.org/10.1021/acs.cgd.5c00519
Citations
1
Primary Topic
Ga2O3 and related materials
Type
article
Field-Weighted Citation Impact
0.43

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article

Preparation and Increased Photoelectrochemical Properties of Nanoporous GaN-Based ZnO Heterojunction

Qinglong Fang, Kunxiao Sun, Dezhong Cao, Dingze Lu et al.
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Ga2O3 and related materials
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article

Preparation and Increased Photoelectrochemical Properties of Nanoporous GaN-Based ZnO Heterojunction

Qinglong Fang, Kunxiao Sun, Dezhong Cao, Dingze Lu, Mengqi Tian, Yue Hao, Lianbi Li, Tao Luo, Yuxuan Diwu, Xiaohua Ma, Sen Wang, Feifei Wang, Ma Li, Ning-Ning Feng
article en
1 citations

Abstract

Nanoporous GaN-based ZnO heterojunctions (NP-GaN/ZnO) are obtained via electrochemical etching and pulsed laser deposition (PLD). NP-GaN/ZnO exhibits decreased stress and increased crystalline quality compared to as-grown GaN-based ZnO heterojunctions (AG-GaN/ZnO). Optical and electrochemical tests exhibit that NP-GaN/ZnO decreases the recombination efficiency of charge and increases the separation and transfer ability of charge. In addition, NP-GaN/ZnO shows a lower turn-on voltage, higher efficiency, and larger H2 production compared with AG-GaN/ZnO, which is ascribed to the lower polarization effect, as well as the increased light absorption region related to the narrowed band gap and the increased crystalline quality of NP-GaN/ZnO. Importantly, both samples show good stability.

Crystal Growth & DesignVol. 25(15)
ON Semiconductor (United States) (US), Ministry of Education of the People's Republic of China (CN), Xidian University (CN), Xi'an Polytechnic University (CN)
China Postdoctoral Science Foundation, China National Textile and Apparel Council, Scientific Research Plan Projects of Shaanxi Education Department, National College Students Innovation and Entrepreneurship Training Program, Key Research and Development Projects of Shaanxi Province
Openalex Percentile: Top 40%
Ga2O3 and related materials
0.43
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