Investigation of Temperature-Dependent Photoluminescence Mechanisms in Porous Silicon Layer for Optoelectronic Devices

This study examines how the variation of temperature affects the photoluminescence properties of porous silicon, offering insights into surface, defects, and carrier dynamics interactions. Porous layers are obtained using an electrochemical method, revealing two notable photoluminescence emission peaks. The study suggests two different non-radiative recombination processes based on intensity changes with temperature. Surface conditions contribute to the thermal quenching of the photoluminescence at low temperatures (10–60 K), while non-radiative recombination is linked to the thermal escape of excitons at higher temperatures (60–300 K). A comprehensive understanding of these processes is essential for effective integration of optoelectronic devices.