Theoretical investigation on the phase diagram and electronic and optical properties of two-dimensional strained Si6H6 monolayer

Two-dimensional materials exhibit unique properties due to enhanced many-body effects and quantum confinement. In this study, we investigate the dynamic stability, possible synthesis routes, and electronic and optical properties of the hydrogenated two-dimensional Kagome silicene (Si6H6) monolayer using first-principle calculations coupled with the GW-Bethe–Salpeter equations. The Ag(111) substrate is found to be suitable for synthesizing the S-Si6H6 monolayer, which can then be obtained through exfoliation technology. In addition, the S-Si6H6 monolayer is identified as a semiconductor (with an indirect bandgap) and exhibits high hole mobility of 345 cm2 V−1 s−1 and high exciton binding energy of 1.38 eV. Furthermore, the bandgap of S-Si6H6 can be effectively modulated by strain. This work offers theoretical insights into the experimental synthesis of this monolayer and provides a modulation strategy for its optoelectronic applications.

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Publication Details

Journal
Applied Physics Letters
Published
2025-07-14
DOI
https://doi.org/10.1063/5.0273643
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
0.00

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Theoretical investigation on the phase diagram and electronic and optical properties of two-dimensional strained Si6H6 monolayer

Hongsheng Liu, Xiaoran Shi, Yanxue Zhang, Weiwei Gao et al.
Applied Physics Letters
2D Materials and Applications
article

Theoretical investigation on the phase diagram and electronic and optical properties of two-dimensional strained Si6H6 monolayer

Hongsheng Liu, Xiaoran Shi, Yanxue Zhang, Weiwei Gao, Junfeng Gao
article en

Abstract

Two-dimensional materials exhibit unique properties due to enhanced many-body effects and quantum confinement. In this study, we investigate the dynamic stability, possible synthesis routes, and electronic and optical properties of the hydrogenated two-dimensional Kagome silicene (Si6H6) monolayer using first-principle calculations coupled with the GW-Bethe–Salpeter equations. The Ag(111) substrate is found to be suitable for synthesizing the S-Si6H6 monolayer, which can then be obtained through exfoliation technology. In addition, the S-Si6H6 monolayer is identified as a semiconductor (with an indirect bandgap) and exhibits high hole mobility of 345 cm2 V−1 s−1 and high exciton binding energy of 1.38 eV. Furthermore, the bandgap of S-Si6H6 can be effectively modulated by strain. This work offers theoretical insights into the experimental synthesis of this monolayer and provides a modulation strategy for its optoelectronic applications.

Applied Physics LettersVol. 127(2)
Taiyuan Normal University (CN), Ministry of Education (ET)
National Natural Science Foundation of China, National Key Research and Development Program of China
Openalex Percentile: Top 88%
2D Materials and Applications
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