Maximizing the performance of FTO/GO/FASnI3/Cu solar cells: Advanced analysis using SCAPS-1D achieving an efficiency of 20.63%

In this investigation, a numerical modeling was developed out using SCAPS-1D to optimize produvtivity levels of a perovskite photovoltaic (PV) cell device utilizing Formamidinium tin Iodide as an active layer (FASnI3; FA=CH(NH2)2) with graphene oxide (GO) serving as the buffer layer. The exceptional electronic and optical characteristics resulted in a notable enhancement of the performance of hybrid organic–inorganic halide perovskite. This paper aims to examine various parameters that influence the effectiveness of the PV cell, including the layers thickness of the absorber (FASnI3) and the GO buffer, the temperature effects, defect density for the GO/FASnI3 interface, and the resistance Rs in series and in shunt RSH. The FTO/FASnI3/GO/Cu configuration achieves peak performance with an open circuit voltage (VOC) of 1.044 V, a short circuit current (JSC) of 28.69 mA·cm-2, a fill factor (FF) of 68.88 % and a power conversion efficiency (PCE) of 20.63 %. The optimization of this device parameters, allows to suggest the possibility of synthesizing an efficient lead-free FASnI3-based PV cell.