Thermal Performance of Stack Oxide Junctionless GaAs FinFET based NH₃ Gas Sensor for Sustainable Environment Monitoring

This study investigates the performance analysis of a stack oxide junctionless Gallium Arsenide FinFET (SO-JL GaAs FinFET) ammonia (NH<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>) gas sensor at elevated temperatures. The detection of NH<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> is facilitated by employing Cobalt (Co) as the sensing gate electrode. The proposed sensor is designed and extensively simulated using the Sentaurus TCAD simulator. To assess its reliability, the impact of temperature variations on transfer characteristics, surface potential, and key sensing parameters, such as threshold voltage (VTH) and transconductance, has been examined. Furthermore, the sensitivity as a function of OFF current (IOFF) and threshold voltage (VTH) is analyzed concerning temperature fluctuations. The simulation results indicate that IOFF and VTH exhibit variations of 38.4% and 23.2%, respectively, as the temperature increases from 275 K to 400 K. These findings demonstrate that the proposed sensor maintains reliability across a wide temperature range, making it suitable for environmental monitoring applications. Additionally, the SO-JL GaAs FinFET NH<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>gas sensor contributes to Sustainable Development Goal 3 (SDG 3) by enabling real-time monitoring of NH<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> concentration, thereby promoting public health and well-being. Moreover, the sensor's advanced sensing technology aligns with SDG 11 by enhancing air quality and ensuring safer urban environments.