Development and characterization of semiconductor-based infrared photodiodes for evaluation of agricultural products

This paper discusses recent advancements in the field of optoelectronics, with a focus on A 3 B 5 semiconductors and their compounds.These semiconductors have been instrumental in developing various optoelectronic devices, including LEDs, lasers, photodetectors, transistors, and solar cells.Narrow-band A 3 B 5 semiconductors, such as InAs, InP, InSb, and their solid solutions, hold promise for environmental monitoring applications.These semiconductors can detect gases in the medium infrared range, essential for monitoring and analyzing naturally occurring and anthropogenic gas emissions.They can continuously and accurately determine humidity levels and assess the ecological conditions of agricultural products during production, processing, and storage.Uncooled GaSb/GaAIAsSb photodiodes designed for the spectral range of 1.1-1.85microns have been successfully fabricated and extensively studied.A novel technique involving lead solution-based growth of GaSb enabled the achievement of a low carrier concentration within the active region, specifically n = 210 15 cm -3 .The photodiodes exhibit a capacitance of 70-110 pF for a 300 micron diameter and 150-250 pF for a 500 micron diameter.These photodiodes, tailored for GaSb-based devices, demonstrate exceptional spectral sensitivity with a peak value of S = 0.95 A/W.Moreover, they exhibit a remarkably low reverse current density, with a range of (4-9) l0 -3 A/cm 2 at U rev = 1.0-2.0V.The response time of the photodiodes is also impressive, with a speedy 5-10 ns.These findings signify a significant step forward in developing photodiodes for the targeted spectral range, with the potential to enhance the performance of a wide range of optoelectronic devices.The innovative growth method of GaSb from a lead solution offers promise for achieving low carrier concentrations, paving the way for further advancements in the field.