Electrochemical epitaxial lift-off and transfer of InGaN/GaN heterostructure films for vertical micro-LED arrays
A vertical Micro-LED array was fabricated via electrochemical epitaxial lift-off (EELO). Tafel analysis shows high EELO efficiency in HNO 3 , resulting in reduced n-GaN roughness. This stems from NO 2 dissolution kinetically accelerating GaN corrosion.
Authors
- Yuqing Yang (ORCID: https://orcid.org/0000-0003-0409-2590)
- Shujia Wang
- Chenguang He (ORCID: https://orcid.org/0000-0002-3683-9401)
- Wenfeng Li (ORCID: https://orcid.org/0000-0002-3250-3062)
- Zhitao Chen (ORCID: https://orcid.org/0000-0003-3909-1061)
- Kang Zhang (ORCID: https://orcid.org/0000-0001-6307-4267)
- Qiao Wang (ORCID: https://orcid.org/0000-0001-8699-0284)
- Peishan Li
- Zexin Dong
- Xingfu Wang
Institutions
- University of Electronic Science and Technology of China (CN)
- South China Normal University (CN)
- Chinese Academy of Sciences (CN)
- Guangdong Academy of Sciences (CN)
- Guangzhou Institute of Energy Conversion (CN)
- Institute of Semiconductors (CN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc01926e
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00