Broadband very long wavelength infrared focal plane array based on phosphorus-doped silicon blocked impurity band

Very long wavelength infrared (VLWIR, 14–30 μm) detection is crucial for observing low-temperature objects, such as those in infrared astronomy and Earth remote sensing, where focal plane arrays (FPAs) with ultra-low dark current and broadband spectral response are essential. Silicon-based blocked impurity band (BIB) photodetectors are promising candidates due to their intrinsically low dark current and sensitivity in the VLWIR range. However, simultaneously achieving a broad spectral response from 14 to 30 μm and high pixel-to-pixel uniformity remains a significant challenge. In this work, we report a broadband VLWIR FPA based on phosphorus-doped silicon (Si:P) BIB photodetectors. We designed a Si:P BIB architecture and a readout integrated circuit optimized for deep cryogenic operation. As a result, we developed a 16 × 16 prototype FPA with a 50% cutoff wavelength extended to 32.2 μm. Operating at 4 K, the array exhibits a peak detectivity of ∼1 × 1011 cm Hz1/2·W−1 and a dark current below 40 fA. This work provides a solution for future broadband VLWIR detection on both space-based and ground-based platforms.

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Publication Details

Journal
Applied Physics Letters
Published
2025-07-14
DOI
https://doi.org/10.1063/5.0278909
Citations
5
Primary Topic
Advanced Semiconductor Detectors and Materials
Type
article
Field-Weighted Citation Impact
3.65

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article

Broadband very long wavelength infrared focal plane array based on phosphorus-doped silicon blocked impurity band

Deyu Zhu, Ran Huang, Weida Hu, Zhangcheng Huang et al.
5 citations
Applied Physics Letters
Advanced Semiconductor Detectors and Materials
3.65
article

Broadband very long wavelength infrared focal plane array based on phosphorus-doped silicon blocked impurity band

Deyu Zhu, Ran Huang, Weida Hu, Zhangcheng Huang, Jiaxiang Guo, Yunfei Sha, Kun Zhang, Ning Li, Peng Wang, Qing Li, Ting He, Wei Xiong, Rong Zhao, Ke Deng, Tao Zhang, Xingyu Qi
article en
5 citations

Abstract

Very long wavelength infrared (VLWIR, 14–30 μm) detection is crucial for observing low-temperature objects, such as those in infrared astronomy and Earth remote sensing, where focal plane arrays (FPAs) with ultra-low dark current and broadband spectral response are essential. Silicon-based blocked impurity band (BIB) photodetectors are promising candidates due to their intrinsically low dark current and sensitivity in the VLWIR range. However, simultaneously achieving a broad spectral response from 14 to 30 μm and high pixel-to-pixel uniformity remains a significant challenge. In this work, we report a broadband VLWIR FPA based on phosphorus-doped silicon (Si:P) BIB photodetectors. We designed a Si:P BIB architecture and a readout integrated circuit optimized for deep cryogenic operation. As a result, we developed a 16 × 16 prototype FPA with a 50% cutoff wavelength extended to 32.2 μm. Operating at 4 K, the array exhibits a peak detectivity of ∼1 × 1011 cm Hz1/2·W−1 and a dark current below 40 fA. This work provides a solution for future broadband VLWIR detection on both space-based and ground-based platforms.

Applied Physics LettersVol. 127(2)
Fudan University (CN), ZheJiang Academy of Agricultural Sciences (CN), Shanghai Institute of Technical Physics (CN), University of Chinese Academy of Sciences (CN)
National Natural Science Foundation of China, Science and Technology Commission of Shanghai Municipality, National Postdoctoral Program for Innovative Talents
Openalex Percentile: Top 7%
Advanced Semiconductor Detectors and Materials
3.65
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