Stacking-Selective Epitaxy of Rare-Earth Diantimonides
Deterministic control of the layering configuration of two-dimensional quantum materials plays a central role in studying their emergent electronic properties. Here we demonstrate <i>in situ</i> control over competing stacking configurations in thin film crystals of the rare-earth diantimonides by synthesizing in proximity to competing structural orders. A crossover between the epitaxially stabilized monoclinic structure and the orthorhombic structure commonly observed in bulk crystals is navigated through three axes─the relative cation/anion ratio, growth temperature, and choice of lanthanide ion─culminating with a comparative magnetotransport study of single-yet-distinct phase CeSb<sub>2</sub> films. These results set the stage for an expanded search for hidden stacking configurations in layered compounds which have evaded detection.
Authors
- Adrian Llanos (ORCID: https://orcid.org/0000-0002-5723-8007)
- Veronica Show (ORCID: https://orcid.org/0000-0002-5700-0429)
- Nicholas Kioussis (ORCID: https://orcid.org/0000-0002-3277-3716)
- Jinwoong Kim (ORCID: https://orcid.org/0000-0003-3616-865X)
- Mizuki Ohno (ORCID: https://orcid.org/0000-0002-8460-5060)
- Joseph Falson (ORCID: https://orcid.org/0000-0003-3183-9864)
- Reiley Dorrian (ORCID: https://orcid.org/0009-0000-9599-6127)
Institutions
- California Institute of Technology (US)
- California State University, Northridge (US)
- W. M. Keck Foundation (US)
Publication Details
- Journal
- Nano Letters
- Published
- 2025-07-14
- DOI
- https://doi.org/10.1021/acs.nanolett.5c02665
- Citations
- 1
- Primary Topic
- Rare-earth and actinide compounds
- Type
- article
- Field-Weighted Citation Impact
- 1.26