Study of Various Approach to Incorporate Negative Capacitance Phenomena in TFET Devices

Negative Capacitance TFETs (NCTFETs) have emerged as a popular extension of TFETs to solve the problem of Low ON-state current and Ambipolar transport conditions. Ferroelectric materials that are used to provide negative capacitance in NCTFETs work on the principle of Landau-Devonshire's theory of Ferroelectricity. They have the property of being able to hold more charge in the same given volume than standard oxides. This property can be utilised to design various architectures of NCTFETs ranging from i) Double-gate structures, ii) Different base materials etc. This manuscript provides a detailed review and survey of Ferroelectric materials and the phenomena of Negative capacitance. Their inclusion in designing NCTFETs in various ways is also reviewed in detail. Finally, we have compared the performance parameters of the different NCTFET design architectures taken for review.