Development and Implementation of SiC MOSFET in Electric Vehicles in MATLAB Simulink

Silicon Carbide (SiC) MOSFETs are revolutionizing high-power electronics due to their superior electrical properties, including high breakdown voltage, low on-resistance, and enhanced thermal performance. This paper presents a comparative analysis of SiC MOSFETs against conventional silicon MOSFETs, emphasizing their advantages in power efficiency, switching characteristics, and reliability. Experimental validation is conducted using a DC-DC converter test setup, demonstrating a 30 percent reduction in switching losses and a <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$20^{\circ} \mathrm{C}$</tex> lower junction temperature in SiC MOSFETs compared to silicon counterparts. Despite these benefits, challenges such as gate-oxide reliability, thermal management, and electromagnetic interference (EMI) mitigation remain critical for widespread adoption. This study highlights recent advancements in SiC technology, including trench-gate designs and advanced passivation techniques, which significantly improve device robustness. The findings confirm the suitability of SiC MOSFETs for nextgeneration high-power applications, paving the way for more efficient and reliable power conversion systems.