30nm T-Shaped TFET for Bio-Sensor Application

Conventional field-effect transistors (FETs) are characterized by suboptimal energy efficiency, whereas tunnel field-effect transistors (TFETs) represent an innovative category distinguished by markedly enhanced efficiency and steep subthreshold performance. TFETs exploit a unique quantum mechanical phenomenon for electron transport, facilitating operation at significantly lower voltage levels. The integration of TFETs with complementary metal-oxide-semiconductor (CMOS) technology promises to substantially diminish power consumption in integrated circuits. In the present study, a 30nm T-shaped TFET has been designed and simulated to investigate its electrical parameters. Until now the DC Performance analysis had not been performed on hybrid architectures, which this manuscript aims to study. The proposed T-shaped TFET exhibits minimal leakage current in the off state and effective conduction in the on state. The device is also characterized in terms of surface potential and electric field via the solution of Poisson's equation, utilizing a parabolic approximation technique to construct an accurate device configuration. Furthermore, the T-shaped device is examined with various dielectric materials to evaluate the sensitivity of device performance for prospective biosensing applications. A significant variation in transistor drain current about different dielectric materials illustrates its potential suitability as a biosensor. The analytical results are compared with data obtained from Synopsys TCAD simulations to validate the proposed framework.