Design Insights and Performance Analysis of VGSOT-MTJ for Energy-Efficient Logic and Memory

In Spintronics devices, STT has been widely utilized for magnetization switching. However, its high current requirements and potential barrier layer degradation make it unsuitable for future energy-efficient applications. Similarly, SRAM faces data retention limitations. Voltage-gated spin-orbit Torque has emerged as an advanced Spintronics device, integrating MRAM for enhanced performance, scalability, and energy efficiency to overcome these issues. VGSOT improves by enabling high-speed switching and reducing power. This article analyzes key parameters that optimize switching behaviour, minimize delay, and enhance energy efficiency, establishing VGSOT as a strong candidate for next-generation applications. These parameters include free layer thickness (tsl), metal oxide thickness (tox), MJT surface radius (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$r$</tex>), anisotropy energy (Ki). This article explores additional parameters influencing switching behaviour and their impact on device performance. This paper enhances VGSOT energy efficiency by analyzing switching parameters using XOR and XNOR gates. Optimal parameter values are analyzed and displayed in the graph and table.