Improved Stability of Fully Recessed Normally-Off GaN MIS-HEMTs With SiN <sub>x</sub> /AlN Dielectric Stack
This work presents a comparative study of GaN metal-insulator-semiconductor high-electron-mobility-transistors (MIS-HEMTs) employing LPCVD-SiN<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>x</i></sub>/ALD-AlN or PEALD-SiO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>2</roman></sub>/ALD-AlN dielectric stacks. The SiN<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>x</i></sub>/AlN MIS-HEMTs exhibit a minimal threshold voltage shift (Δ<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>TH</roman></sub>) of -0.24 V with an on/off current ratio up to 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>8</roman></sup> under 150 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">∘</sup>C, compared to Δ<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>TH</roman></sub> = 2.0 V for SiO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>2</roman></sub>/AlN MIS-HEMTs. Under gate bias stress, SiN<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>x</i></sub>/AlN devices show Δ<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>TH</roman></sub> of -0.90 V (positive) and -0.45 V (negative), versus -1.75 and 3.31 V for SiO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>2</roman></sub>/AlN devices. After maintaining 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>4</roman></sup> s of off-state drain-bias stress, SiN<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>x</i></sub>/AlN MIS-HEMT achieves a small Δ<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>TH</roman></sub> of -0.45 V. The improved stability is attributed to the better interface quality of SiN<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>x</i></sub>/AlN stack, enabled by the low-pressure chemical vapor deposition (LPCVD) process and nitrogen-rich environment. These findings underscore the potential of LPCVD-SiN<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>x</i></sub>/ALD-AlN dielectric stacks in advancing GaN MIS-HEMTs for high-performance and reliable power switching applications.
Authors
- Chunfeng Hao
- Yong Cai (ORCID: https://orcid.org/0000-0001-9849-0658)
- Xuguang Deng (ORCID: https://orcid.org/0000-0002-8882-0999)
- Yingfei Sun (ORCID: https://orcid.org/0000-0002-9221-9899)
- Zhongming Zeng (ORCID: https://orcid.org/0000-0001-7240-2058)
- S.L. Lu (ORCID: https://orcid.org/0009-0000-4332-9509)
- Yu Li (ORCID: https://orcid.org/0009-0000-8217-3201)
- Ang Li (ORCID: https://orcid.org/0000-0002-1872-5005)
- Yang An (ORCID: https://orcid.org/0000-0003-1527-033X)
- Haochen Zhang (ORCID: https://orcid.org/0000-0001-7664-9074)
- Guohao Yu (ORCID: https://orcid.org/0000-0002-6921-2728)
- Baoshun Zhang (ORCID: https://orcid.org/0000-0002-4628-8236)
- Bohan Guo (ORCID: https://orcid.org/0009-0000-6952-8637)
- Bosen Liu (ORCID: https://orcid.org/0009-0000-2757-9241)
- Huixin Yue
Institutions
- University of Science and Technology of China (CN)
- Chinese Academy of Sciences (CN)
- Suzhou Institute of Nano-tech and Nano-bionics (CN)
Publication Details
- Journal
- IEEE Transactions on Electron Devices
- Published
- 2025-07-14
- DOI
- https://doi.org/10.1109/ted.2025.3585908
- Citations
- 2
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 2.52
Funders
- National Natural Science Foundation of China
- Fundamental Research Funds for the Central Universities