Compact Millimeter-Wave Single- and Dual-Band On-Chip Bandpass Filters Using GaAs Technology

In this paper, two compact on-chip bandpass filters (BPFs) at millimeter-wave frequencies, i.e., single-band BPF and dual-band BPF, are proposed in gallium arsenide (GaAs) technology. To understand the working mechanism of the single-band BPF, a transmission line (TL) equivalent circuit model is presented and analyzed to estimate the position of the transmission zeros (TZs). Based on the single-band BPF structure, two additional metallic strips on M1 layer are placed beneath the pair of meander strips to construct a dual-band BPF. Consequently, a dual-band frequency response can be realized by introducing two TZs within the passband. For demonstration, two prototypes of the BPF are fabricated and tested to validate the proposed idea, whose simulated and measured results are in good agreement. Both of the single-and dual-band BPFs have the same chip size of only 0.29 mm W 0.23 mm, excluding the feeding.

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Publication Details

Journal
IEEE Journal of the Electron Devices Society
Published
2025-01-01
DOI
https://doi.org/10.1109/jeds.2025.3588470
Citations
1
Primary Topic
Microwave Engineering and Waveguides
Type
article
Field-Weighted Citation Impact
0.73

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article

Compact Millimeter-Wave Single- and Dual-Band On-Chip Bandpass Filters Using GaAs Technology

Yongzheng Li, Kai‐Da Xu, Xiaoyu Weng
1 citations
IEEE Journal of the Electron Devices Society
Microwave Engineering and Waveguides
0.73
article

Compact Millimeter-Wave Single- and Dual-Band On-Chip Bandpass Filters Using GaAs Technology

Yongzheng Li, Kai‐Da Xu, Xiaoyu Weng
article en
1 citations

Abstract

In this paper, two compact on-chip bandpass filters (BPFs) at millimeter-wave frequencies, i.e., single-band BPF and dual-band BPF, are proposed in gallium arsenide (GaAs) technology. To understand the working mechanism of the single-band BPF, a transmission line (TL) equivalent circuit model is presented and analyzed to estimate the position of the transmission zeros (TZs). Based on the single-band BPF structure, two additional metallic strips on M1 layer are placed beneath the pair of meander strips to construct a dual-band BPF. Consequently, a dual-band frequency response can be realized by introducing two TZs within the passband. For demonstration, two prototypes of the BPF are fabricated and tested to validate the proposed idea, whose simulated and measured results are in good agreement. Both of the single-and dual-band BPFs have the same chip size of only 0.29 mm W 0.23 mm, excluding the feeding.

IEEE Journal of the Electron Devices SocietyVol. 13
Xi'an Jiaotong University (CN)
National Natural Science Foundation of China, Chunhui Project Foundation of the Education Department of China, HORIZON EUROPE Marie Sklodowska-Curie Actions
Openalex Percentile: Top 26%
Microwave Engineering and Waveguides
0.73
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