Aqueous Selenium Ion Engineering: A Universal Strategy to Reverse Gradient Limitations in Sb <sub>2</sub> (S,Se) <sub>3</sub> Photovoltaics for Enhanced Carrier Dynamics and Performance
Abstract Antimony selenosulfide (Sb₂(S,Se)₃) is a promising earth‐abundant photovoltaic material owing to its excellent optical and electrical properties. Currently, solution‐processed Sb₂(S,Se)₃ photovoltaics face a critical selenium paradox: uncontrolled gradient formation induces band misalignment while creating sulfur vacancies ( V S ) and antimony antisites (Sb S/Se ). Here, an ambient aqueous selenide ion treatment (ASIT) acting as atomic‐scale “ionic scalpel” is pioneered that surgically reconstructs selenium distribution. Through room‐temperature ionic diffusion, this liquid‐phase ion engineering achieves dual breakthroughs: 1) Gradient reversal via surface and bulk selenium enrichment flattening valence band offset from 0.12 to 0.03 eV and establishing ideal Type‐II band alignment, 2) Autogenous deep‐level defects healing via Se−V S /Sb S bond reconfiguration. Significantly, time‐resolved photoluminescence (TRPL) characterization unveils, for the first time, the ultrafast charge‐transfer dynamics at the heterointerface of CdS/Sb₂(S,Se)₃ films fabricated via the ASIT strategy. Ultimately, the resultant Sb₂(S,Se)₃ solar cell shatters performance ceiling with a 10.38% efficiency and record open‐circuit voltage of 0.694 V, showing 57% carrier lifetime enhancement. The water‐based process compatibility with roll‐to‐roll manufacturing positions ASIT as a game‐changer for scalable production of gradient‐engineered absorbers beyond antimony‐based systems.
Authors
- Tao Chen (ORCID: https://orcid.org/0000-0001-6067-2122)
- Rongfeng Tang (ORCID: https://orcid.org/0000-0002-2211-5859)
- Zhiheng Xu (ORCID: https://orcid.org/0000-0002-1486-6732)
- Jun Xu (ORCID: https://orcid.org/0000-0002-0469-9766)
- Chong Chen (ORCID: https://orcid.org/0000-0003-2940-2030)
- Yan Zhang (ORCID: https://orcid.org/0000-0002-0704-7421)
- Gaoyang Li (ORCID: https://orcid.org/0000-0002-0124-036X)
- Chong-Fei Ruan
- Chenlong Gao
- Shuwei Sheng
Institutions
- University of Science and Technology of China (CN)
- Hefei University of Technology (CN)
- Chinese Academy of Sciences (CN)
- Institute of Solid State Physics (CN)
Publication Details
- Journal
- Advanced Functional Materials
- Published
- 2025-07-14
- DOI
- https://doi.org/10.1002/adfm.202512587
- Citations
- 6
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 4.38
Funders
- National Natural Science Foundation of China
- Natural Science Foundation of Anhui Province
- Fundamental Research Funds for the Central Universities