Aqueous Selenium Ion Engineering: A Universal Strategy to Reverse Gradient Limitations in Sb <sub>2</sub> (S,Se) <sub>3</sub> Photovoltaics for Enhanced Carrier Dynamics and Performance

Abstract Antimony selenosulfide (Sb₂(S,Se)₃) is a promising earth‐abundant photovoltaic material owing to its excellent optical and electrical properties. Currently, solution‐processed Sb₂(S,Se)₃ photovoltaics face a critical selenium paradox: uncontrolled gradient formation induces band misalignment while creating sulfur vacancies ( V S ) and antimony antisites (Sb S/Se ). Here, an ambient aqueous selenide ion treatment (ASIT) acting as atomic‐scale “ionic scalpel” is pioneered that surgically reconstructs selenium distribution. Through room‐temperature ionic diffusion, this liquid‐phase ion engineering achieves dual breakthroughs: 1) Gradient reversal via surface and bulk selenium enrichment flattening valence band offset from 0.12 to 0.03 eV and establishing ideal Type‐II band alignment, 2) Autogenous deep‐level defects healing via Se−V S /Sb S bond reconfiguration. Significantly, time‐resolved photoluminescence (TRPL) characterization unveils, for the first time, the ultrafast charge‐transfer dynamics at the heterointerface of CdS/Sb₂(S,Se)₃ films fabricated via the ASIT strategy. Ultimately, the resultant Sb₂(S,Se)₃ solar cell shatters performance ceiling with a 10.38% efficiency and record open‐circuit voltage of 0.694 V, showing 57% carrier lifetime enhancement. The water‐based process compatibility with roll‐to‐roll manufacturing positions ASIT as a game‐changer for scalable production of gradient‐engineered absorbers beyond antimony‐based systems.

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Publication Details

Journal
Advanced Functional Materials
Published
2025-07-14
DOI
https://doi.org/10.1002/adfm.202512587
Citations
6
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
4.38

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article

Aqueous Selenium Ion Engineering: A Universal Strategy to Reverse Gradient Limitations in Sb 2 (S,Se) 3 Photovoltaics for Enhanced Carrier Dynamics and Performance

Tao Chen, Rongfeng Tang, Zhiheng Xu, Jun Xu et al.
6 citations
Advanced Functional Materials
Chalcogenide Semiconductor Thin Films
4.38
article

Aqueous Selenium Ion Engineering: A Universal Strategy to Reverse Gradient Limitations in Sb 2 (S,Se) 3 Photovoltaics for Enhanced Carrier Dynamics and Performance

Tao Chen, Rongfeng Tang, Zhiheng Xu, Jun Xu, Chong Chen, Yan Zhang, Gaoyang Li, Chong-Fei Ruan, Chenlong Gao, Shuwei Sheng
article en
6 citations

Abstract

Abstract Antimony selenosulfide (Sb₂(S,Se)₃) is a promising earth‐abundant photovoltaic material owing to its excellent optical and electrical properties. Currently, solution‐processed Sb₂(S,Se)₃ photovoltaics face a critical selenium paradox: uncontrolled gradient formation induces band misalignment while creating sulfur vacancies ( V S ) and antimony antisites (Sb S/Se ). Here, an ambient aqueous selenide ion treatment (ASIT) acting as atomic‐scale “ionic scalpel” is pioneered that surgically reconstructs selenium distribution. Through room‐temperature ionic diffusion, this liquid‐phase ion engineering achieves dual breakthroughs: 1) Gradient reversal via surface and bulk selenium enrichment flattening valence band offset from 0.12 to 0.03 eV and establishing ideal Type‐II band alignment, 2) Autogenous deep‐level defects healing via Se−V S /Sb S bond reconfiguration. Significantly, time‐resolved photoluminescence (TRPL) characterization unveils, for the first time, the ultrafast charge‐transfer dynamics at the heterointerface of CdS/Sb₂(S,Se)₃ films fabricated via the ASIT strategy. Ultimately, the resultant Sb₂(S,Se)₃ solar cell shatters performance ceiling with a 10.38% efficiency and record open‐circuit voltage of 0.694 V, showing 57% carrier lifetime enhancement. The water‐based process compatibility with roll‐to‐roll manufacturing positions ASIT as a game‐changer for scalable production of gradient‐engineered absorbers beyond antimony‐based systems.

Advanced Functional MaterialsVol. 36(2)
University of Science and Technology of China (CN), Hefei University of Technology (CN), Chinese Academy of Sciences (CN), Institute of Solid State Physics (CN)
National Natural Science Foundation of China, Natural Science Foundation of Anhui Province, Fundamental Research Funds for the Central Universities
Openalex Percentile: Top 5%
Chalcogenide Semiconductor Thin Films
4.38
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