Electric Field Distribution within a Van der Waals Heterostructure

Van der Waals heterostructures offer a playground for optoelectronics with the promise of coupling a broad range of materials while lifting the constraints of epitaxy. Optimization of such devices also requires careful control of the spatial localization of the in-plane and out-of-plane electric field. Therefore, <i>operando</i> tools that give direct access to the local energy and electric field landscape are necessary. Here, we demonstrate that nanobeam X-ray photoemission imaging is an effective method to map the electric field in a 2D flake-based multielectrode transistor and a WS<sub>2</sub>/MoSe<sub>2</sub> heterostructure, while the electrical biases are applied. We discuss how the shape and geometry of the flake, the electrical contacts, and the overlapping of the flakes impact the field distribution. In the region where flakes overlap, the in-plane electric field distribution aligns in the two materials, whereas the out-of-plane field distribution resulting from the gating charge injection deviates from a homogeneous distribution.

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Publication Details

Journal
Nano Letters
Published
2025-07-14
DOI
https://doi.org/10.1021/acs.nanolett.5c02475
Citations
2
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
1.04
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article

Electric Field Distribution within a Van der Waals Heterostructure

Pavel Dudin, Mariarosa Cavallo, Marc Paye, Johan Biscaras et al.
2 citations
Nano Letters
2D Materials and Applications
1.04
article

Electric Field Distribution within a Van der Waals Heterostructure

Pavel Dudin, Mariarosa Cavallo, Marc Paye, Johan Biscaras, Emmanuel Lhuillier, Debora Pierucci, Adrien Khalili, Erwan Bossavit, Dario Mastrippolito, J. Ávila, Huichen Zhang, James K. Utterback, Clément Gureghian, Tommaso Gemo, Albin Colle, Dries De Pesseroey, Giorgia Strobbia
article en
2 citations

Abstract

Van der Waals heterostructures offer a playground for optoelectronics with the promise of coupling a broad range of materials while lifting the constraints of epitaxy. Optimization of such devices also requires careful control of the spatial localization of the in-plane and out-of-plane electric field. Therefore, <i>operando</i> tools that give direct access to the local energy and electric field landscape are necessary. Here, we demonstrate that nanobeam X-ray photoemission imaging is an effective method to map the electric field in a 2D flake-based multielectrode transistor and a WS<sub>2</sub>/MoSe<sub>2</sub> heterostructure, while the electrical biases are applied. We discuss how the shape and geometry of the flake, the electrical contacts, and the overlapping of the flakes impact the field distribution. In the region where flakes overlap, the in-plane electric field distribution aligns in the two materials, whereas the out-of-plane field distribution resulting from the gating charge injection deviates from a homogeneous distribution.

Nano LettersVol. 25(29)
Centre National de la Recherche Scientifique (FR), Synchrotron soleil (FR), Sorbonne Université (FR), Institut des NanoSciences de Paris (FR), Institut de minéralogie, de physique des matériaux et de cosmochimie (FR)
Openalex Percentile: Top 24%
2D Materials and Applications
1.04
DOIOpen Access PDFOpenAlex
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