High mobility field-effect transistors produced by direct growth of C <sub>70</sub> single crystals from a solution
Field-effect transistors (FETs) produced by direct growth of C 70 single crystals from a solution exhibited a high electron mobility of 1.14 cm 2 V −1 s −1 that was more than two orders of magnitude compared to the previously reported C 70 FETs.
Authors
- Tadahiko Hirai (ORCID: https://orcid.org/0000-0002-2674-3262)
- Takeshi Araki (ORCID: https://orcid.org/0000-0003-1107-7786)
- Nobuyuki Aoki (ORCID: https://orcid.org/0000-0001-9203-6040)
- Ryo Suzuki (ORCID: https://orcid.org/0000-0002-1881-696X)
- Kouhei Ichiyanagi (ORCID: https://orcid.org/0000-0001-7446-034X)
- Masaru Tachibana (ORCID: https://orcid.org/0000-0002-5459-011X)
- Yutaka Sakai (ORCID: https://orcid.org/0000-0002-9377-240X)
- Toshiyuki Sasaki (ORCID: https://orcid.org/0000-0002-2849-1900)
Institutions
- Chiba University (JP)
- Japan Synchrotron Radiation Research Institute (JP)
- CSIRO Manufacturing (AU)
- Yokohama City University (JP)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc01627d
- Primary Topic
- Fullerene Chemistry and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Japan Agency for Medical Research and Development
- Yokohama City University
- Osaka University
- University of Tsukuba
- Japan Society for the Promotion of Science
- Japan Science and Technology Agency
- Institute for Protein Research, Osaka University
- Precursory Research for Embryonic Science and Technology