First-Principles Insights into Mo and Chalcogen Dopant Positions in Anatase, TiO2
This study employs density functional theory (DFT) to investigate the electronic and optical properties of molybdenum (Mo) and chalcogen (S, Se, Te) co-doped anatase TiO2. Two co-doping configurations were examined: Model 1, where the dopants are adjacent, and Model 2, where the dopants are farther apart. The incorporation of Mo into anatase TiO2 resulted in a significant bandgap reduction, lowering it from 3.22 eV (pure TiO2) to range of 2.52–0.68 eV, depending on the specific doping model. The introduction of Mo-4d states below the conduction band led to a shift in the Fermi level from the top of the valence band to the bottom of the conduction band, confirming the n-type doping characteristics of Mo in TiO2. Chalcogen doping introduced isolated electronic states from Te-5p, S-3p, and Se-4p located above the valence band maximum, further reducing the bandgap. Among the examined configurations, Mo–S co-doping in Model 1 exhibited most optimal structural stability structure with the fewer impurity states, enhancing photocatalytic efficiency by reducing charge recombination. With the exception of Mo–Te co-doping, all co-doped systems demonstrated strong oxidation power under visible light, making Mo-S and Mo-Se co-doped TiO2 promising candidates for oxidation-driven photocatalysis. However, their limited reduction ability suggests they may be less suitable for water-splitting applications. The study also revealed that dopant positioning significantly influences charge transfer and optoelectronic properties. Model 1 favored localized electron density and weaker magnetization, while Model 2 exhibited delocalized charge density and stronger magnetization. These findings underscore the critical role of dopant arrangement in optimizing TiO2-based photocatalysts for solar energy applications.
Authors
- Ponniah Vajeeston (ORCID: https://orcid.org/0000-0002-5566-2429)
- Dhayalan Velauthapillai (ORCID: https://orcid.org/0000-0002-4162-7446)
- W. A. Chapa Pamodani Wanniarachchi (ORCID: https://orcid.org/0000-0002-3262-5705)
- Talal Rahman
Institutions
- Western Norway University of Applied Sciences (NO)
- University of Oslo (NO)
- University of Jaffna (LK)
Publication Details
- Journal
- Computation
- Published
- 2025-07-14
- DOI
- https://doi.org/10.3390/computation13070170
- Primary Topic
- Electronic and Structural Properties of Oxides
- Type
- article
- Field-Weighted Citation Impact
- 0.00