Single crystal halide perovskites for resistive switching memory devices and artificial synapse
Single-crystal halide perovskites, with defect-lean ABX 3 structures, offer promising solutions for energy-efficient, reliable resistive-switching memories in AI and edge computing, overcoming challenges of grain boundaries and ion migration.
Authors
- Hyojung Kim (ORCID: https://orcid.org/0009-0002-7120-2243)
Institutions
- Sejong University (KR)
Publication Details
- Journal
- Materials Advances
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5ma00609k
- Citations
- 1
- Primary Topic
- Perovskite Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.73
Funders
- National Research Foundation
- National Research Foundation of Korea
- Ministry of Science and ICT, South Korea