Highly Transparent Nanoscale Tunnel Oxide Polysilicon Passivated Contacts: Optimisation, Analysis, and Impact Study

The presented work on nanometre scale ultra‐thin tunnel oxide passivated contact (UT‐TOPCon) technology presents a promising pathway for enhancing power conversion efficiency in Si solar cells by mitigating parasitic optical losses. The in‐depth optimisation demonstrates record‐low surface recombination currents for a polysilicon layer under 3 nm thick, measuring 0.8 fAcm −2 on planar and 1.3 fAcm −2 on textured surfaces. Low specific contact resistivities between 2.5 and 5 mΩcm 2 were measured on various samples, confirming its excellent carrier transport properties. Furthermore, optical properties were characterised and the opto‐electrical inputs were incorporated into a comprehensive numerical simulation study to evaluate the impact of its application for Si‐perovskite tandem and various single‐junction Si cell architectures. The results indicate significant performance improvements to Si‐perovskite tandem devices, and very high efficiency potential of 26.7% in front and rear UT‐TOPCon designs and up to 27.5% in interdigitated back‐contact UT‐TOPCon structures.

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Publication Details

Journal
Solar RRL
Published
2025-07-14
DOI
https://doi.org/10.1002/solr.202500246
Citations
4
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
2.92

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article

Highly Transparent Nanoscale Tunnel Oxide Polysilicon Passivated Contacts: Optimisation, Analysis, and Impact Study

Rabin Basnet, Zhongshu Yang, Kean Chern Fong, Anitta Rose Varghese et al.
4 citations
Solar RRL
Semiconductor materials and devices
2.92
article

Highly Transparent Nanoscale Tunnel Oxide Polysilicon Passivated Contacts: Optimisation, Analysis, and Impact Study

Rabin Basnet, Zhongshu Yang, Kean Chern Fong, Anitta Rose Varghese, Jiali Wang, Guilherme Carvalho, Felipe Kremer, Marco Ernst, Muhammad Faheem Maqsood, Heping Shen, Daniel Macdonald, James Bullock, Stephane Armand, Xinyu Zhang, Di Yan, Jie Yang, Peiting Zheng
article en
4 citations

Abstract

The presented work on nanometre scale ultra‐thin tunnel oxide passivated contact (UT‐TOPCon) technology presents a promising pathway for enhancing power conversion efficiency in Si solar cells by mitigating parasitic optical losses. The in‐depth optimisation demonstrates record‐low surface recombination currents for a polysilicon layer under 3 nm thick, measuring 0.8 fAcm −2 on planar and 1.3 fAcm −2 on textured surfaces. Low specific contact resistivities between 2.5 and 5 mΩcm 2 were measured on various samples, confirming its excellent carrier transport properties. Furthermore, optical properties were characterised and the opto‐electrical inputs were incorporated into a comprehensive numerical simulation study to evaluate the impact of its application for Si‐perovskite tandem and various single‐junction Si cell architectures. The results indicate significant performance improvements to Si‐perovskite tandem devices, and very high efficiency potential of 26.7% in front and rear UT‐TOPCon designs and up to 27.5% in interdigitated back‐contact UT‐TOPCon structures.

Solar RRLVol. 9(16)
Australian National University (AU), The University of Melbourne (AU), Beijing Solar Energy Research Institute (CN)
Australian National Fabrication Facility, Australian Renewable Energy Agency
Openalex Percentile: Top 9%
Semiconductor materials and devices
2.92
DOIOpen Access PDFOpenAlex
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