Bipolar junction transistor amplifiers-state-space modeling across frequencies

This study presents a unified time-domain analysis of three fundamental bipolar-junction-transistor amplifier topologies-common-emitter (CEA), common-collector (CCA), and common-base (CBA)-under both low- and high-frequency transient conditions. Unlike traditional small-signal or SPICE-based approaches, this work employs a state-space modeling framework implemented in MATLAB-Simulink to derive and simulate the dynamic behavior of each topology. The models capture both steady-state and transient responses, offering deeper insight into system dynamics, including the effects of Miller capacitance at high frequencies. The CEA demonstrates high voltage gain, while the CCA and CBA exhibit lower but topology-consistent gains, with simulation results closely matching analytical predictions. Although experimental validation is not included, the simulation parameters are carefully selected to reflect realistic operating conditions. The novelty of this work lies in its application of state-space methods to analog amplifier modeling, providing a transparent and extendable foundation for analyzing more complex circuits such as operational amplifiers. This approach enhances theoretical understanding and supports practical design decisions across a wide range of analog applications.

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Publication Details

Journal
Journal of Electronics and Electrical Engineering
Published
2025-07-14
DOI
https://doi.org/10.37256/jeee.4220256767
Primary Topic
Semiconductor Lasers and Optical Devices
Type
article
Field-Weighted Citation Impact
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article

Bipolar junction transistor amplifiers-state-space modeling across frequencies

Juan L. Aguayo, Gabriel García-Rojas, Roya Rafiezadeh, José M. Campos-Salazar
Journal of Electronics and Electrical Engineering
Semiconductor Lasers and Optical Devices
article

Bipolar junction transistor amplifiers-state-space modeling across frequencies

Juan L. Aguayo, Gabriel García-Rojas, Roya Rafiezadeh, José M. Campos-Salazar
article en

Abstract

This study presents a unified time-domain analysis of three fundamental bipolar-junction-transistor amplifier topologies-common-emitter (CEA), common-collector (CCA), and common-base (CBA)-under both low- and high-frequency transient conditions. Unlike traditional small-signal or SPICE-based approaches, this work employs a state-space modeling framework implemented in MATLAB-Simulink to derive and simulate the dynamic behavior of each topology. The models capture both steady-state and transient responses, offering deeper insight into system dynamics, including the effects of Miller capacitance at high frequencies. The CEA demonstrates high voltage gain, while the CCA and CBA exhibit lower but topology-consistent gains, with simulation results closely matching analytical predictions. Although experimental validation is not included, the simulation parameters are carefully selected to reflect realistic operating conditions. The novelty of this work lies in its application of state-space methods to analog amplifier modeling, providing a transparent and extendable foundation for analyzing more complex circuits such as operational amplifiers. This approach enhances theoretical understanding and supports practical design decisions across a wide range of analog applications.

Journal of Electronics and Electrical Engineering
University of Nottingham (GB), Austral University of Chile (CL), Universitat Politècnica de Catalunya (ES)
Openalex Percentile: Top 85%
Semiconductor Lasers and Optical Devices
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Bipolar junction transistor amplifiers-state-space modeling across frequencies — Juan L. Aguayo, Gabriel García-Rojas, et al. · Journal of Electronics and Electrical Engineering (2025) | TGRS Research Map | TGRS