Ultra‐High Mobility Atomically‐Ordered InGaZnO Transistors Through Atomic Layer Deposition

Abstract Owing to the challenges of downsizing and reducing power consumption in the semiconductor industry, oxide semiconductors such as indium‐gallium‐zinc‐oxide (IGZO) are emerging as notable alternative materials due to their compatibility with back‐end‐of‐line processes and low leakage currents. However, enhancing electrical characteristics of oxide semiconductors to match silicon‐based channels remains crucial. In this study, atomically‐ordered (AO) IGZO is first synthesized using plasma‐enhanced atomic layer deposition, resulting in a transistor with a field‐effect mobility of 245 cm 2 Vs −1 and excellent switching properties (threshold voltage = 0.17 V, subthreshold swing <75 mV dec −1 ) in a low thermal budget process (below 250 °C). Theoretical and experimental studies revealed that the ultra‐high mobility originates from the carrier quantum confinement induced by the multi‐quantum well structure of AO‐IGZO. Our approach highlights the potential of oxide semiconductors to surpass limitations of silicon‐based technology limitations, thereby paving the way for next‐generation channel materials.