Quantized Conductance and Multilevel Memory Operation in Mn₃O₄ Nanowire Network Devices Combined with Low Voltage Operation and Oxygen Vacancy Induced Resistive Switching

Abstract Quantum effects in nanowires and nanodevices can potentially revolutionize the device concepts with multi‐functionalities for future technologies. Memristive devices which undergo transition from high resistance state to low resistance state involve nanoscale conduction paths can show quantum effects at room temperature. Here, Mn 3 O 4 nanowires based memristor showing very reliable resistive switching at very low voltages and with ON/OFF States ratio ∼ 10 3 is reported. The switching device can also be programmed to multiple memory states (up to 16 states ∼ 2 4 ). Since the conduction paths are geometrically constrained along the nanowires, quantized conductance steps are observed. Step‐wise conductance jumps are observed during the SET and RESET process with better control along RESET process. Conductance jumps range between 1 and 9 G 0 . The nanowire devices show very consistent resistive switching up to 100 °C. These measurements confirm extremely stable nanowire based resistive switching devices which can be used for next‐generation memories showing quantum effects in neuromorphic computing architectures.