Multi-Level Voltage High Fault-Tolerance Modular SRM Converter With Simultaneous Charge and Discharge Capability for HEV
The air pollution problem has drawn the attention of researchers to hybrid electric vehi- cles (HEV). Among electric motors, the switched reluctance motor (SRM) is an appropriate option because of its low cost, reliability, non-existing magnet and winding on the rotor, and etc. In the SRM drive for HEV application, researchers are interested in subjects, such as fault-tolerance, modular structure, battery life, low cost and low size drive, high performance, etc. Therefore, this paper proposes a modular structure-based switched reluctance motor drive for HEV application. The proposed topology can provide multi-level voltage, fault tolerance and flexible charging and discharging modes through its modular structure. The specific structure of the topology reduces the diodes of the power path and the gate drive supply, which reduces losses, cost and size. The simultaneous charging and discharging can established using the switches of the modules and the topology relays which increase electrical capability, thus, it can discharge two packs while two other packs are charged simultaneously. The front-end converter can be connected to any SRM drive, which is beneficial for mass production. The battery packs can be charged in the states of running, idling and resting at home, which increases the applicability of the drive. The experimental results are established on the prototype DSP F28355 and SRM 8/6. The simulation and experimental results confirmed the effectiveness of the proposed topology for the SRM drive.
Authors
- Amir Rashidi (ORCID: https://orcid.org/0000-0002-5656-0264)
- Sayed Morteza Saghaian Nejad (ORCID: https://orcid.org/0000-0001-5100-902X)
- Dong‐Hee Lee (ORCID: https://orcid.org/0000-0001-5577-5354)
- Hamid Malekpour
Institutions
- Kyungsung University (KR)
- Isfahan University of Technology (IR)
- Hakim Sabzevari University (IR)
Publication Details
- Journal
- IEEE Access
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1109/access.2025.3587508
- Citations
- 4
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 2.92