General Spectral Model for Quantitative Interfacial Electronic State Analysis With Different Growth Modes

ABSTRACT This study introduces a general spectral model for quantitative interface electronic state analysis under different growth modes (layer‐by‐layer growth mode, island growth mode, and hybrid growth mode). The model incorporates variations in coverage and thickness, considering scenarios with and without interfacial electronic states. This model can be used for a variety of spectroscopies, such as X‐ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), X‐ray absorption spectroscopy (XAS), and other thickness‐ or coverage‐dependent spectroscopies. This study presents an in‐depth examination of film or island contributions alongside the substrate across different thicknesses in the layer‐by‐layer growth mode and in the island‐like growth mode with regard to thickness and volume normalization. Finally, we applied our models in two typical experimental cases, CoO/Fe 3 O 4 and NiO/ZnO interfaces with interface states and with different coverages, revealing distinct spectral variances between layer‐by‐layer and island‐like growth modes. Overall, this general model serves as a valuable tool for studying the complexities of interfacial phenomena in material science and surface physics.