DEVELOPMENT OF AN ION SOURCE FOR IMPLANTERS AT THE INSTITUTE OF APPLIED PHYSICS

Based on the beryllium ion source developed at the Institute of Applied Physics of the NAS of Ukraine, the design of an ion source with a slit extraction geometry has been carried out to improve its operational characteristics, including operating life, optimization of working material consumption, and expansion of the spectrum of generated ions. This work presents a description of the design of an evaporative ion source for generating strip ion beams intended for use in a technological line for the production of semiconductors with narrow-band p-n junctions.