Analysis and Modeling of Intrinsic Capacitance in Enhancement Mode GaN HEMT

This paper analyzes the intrinsic capacitance of enhancement-mode (e-mode) Gallium Nitride-based High Electron Mobility Transistor (GaN HEMTs). The intrinsic capacitance was measured using Ciss (input capacitance), Coss (output capacitance), and Crss (reverse transfer capacitance). The Coss was also analyzed. Based on depletion-mode (d-mode) measurement data from the MIT virtual source GaN HEMT (MVSG) compact model, a measurement circuit for Ciss, Coss and Crss was constructed and calibrated for reliability. Subsequently, the circuit, initially configured for d-mode GaN HEMT intrinsic capacitance measurements, was optimized for e-mode GaN HEMT, upon which intrinsic capacitance was measured. The influence on the graph was analyzed by varying parameters in the measured capacitance data, leading to the modeling of intrinsic capacitance.