Energy-Efficient Superjunction IGBT with Improved Breakdown Voltage Using Floating Island Structure
This paper presents a novel IGBT design with a floating island at the bottom of superjunction (SJ) IGBT. The proposed device structure significantly improves 8.33% in breakdown voltage and 6.67% in electric field, respectively. This result improves overall device performance and reliability. The simulation results, obtained using Silvaco TCAD software, underscore the potential of the floating island structure in addressing the challenges of energy loss and the Von-Eoff tradeoff in conventional IGBTs. IGBTs (Insulated Gate Bipolar Transistors) are essential components in modern power electronics systems, contributing significantly to energy efficiency and sustainability.
Authors
- Ajay Mallick (ORCID: https://orcid.org/0000-0002-7021-195X)
- Ashutosh Mishra (ORCID: https://orcid.org/0000-0001-8579-5583)
- Alok Naugarhiya (ORCID: https://orcid.org/0000-0003-0182-2498)
Institutions
- National Institute of Technology Raipur (IN)
- Birla Institute of Technology and Science, Pilani - Dubai Campus (AE)
- Birla Institute of Technology and Science, Pilani (IN)
Publication Details
- Published
- 2025-05-01
- DOI
- https://doi.org/10.1109/iceccc65144.2025.11064169
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00