Thin High Entropy CoCrFeNiTix Alloy Films for Resistive Elements of Microelectronics
Using the method of magnetron sputtering from a multicomponent target manufactured by hot pressing of a powder mixture, thin films of a high-entropy CoCrFeNiTix alloy on silicon substrates were first obtained. The microstructure and phase composition of these films have been studied. Resistive thin-film elements are made and their electrical resistance is measured at different temperatures. It is shown that the value of the electrical resistance of new resistive elements linearly depends on temperature with the negative temperature coefficient TCR = –4.66 × 10–5 K–1.
Authors
- А. П. Орлов (ORCID: https://orcid.org/0000-0003-1743-8722)
- M. V. Polyakov (ORCID: https://orcid.org/0009-0007-2861-9074)
- С. Г. Вадченко (ORCID: https://orcid.org/0000-0002-2360-2114)
- А. С. Рогачев (ORCID: https://orcid.org/0000-0003-1554-0803)
- D. Yu. Kovalev (ORCID: https://orcid.org/0000-0002-8285-5656)
- Ph. V. Kiryukhantsev–Korneev (ORCID: https://orcid.org/0000-0003-1635-4746)
- Lidiya S. Volkova (ORCID: https://orcid.org/0000-0003-4860-0585)
- Dmitry Moskovskikh (ORCID: https://orcid.org/0000-0001-5168-4885)
Institutions
- National University of Science and Technology (RU)
- Russian Academy of Sciences (RU)
- Institute of Structural Macrokinetics and Materials Science (RU)
- Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences (RU)
Publication Details
- Journal
- Surface Engineering and Applied Electrochemistry
- Published
- 2025-05-01
- DOI
- https://doi.org/10.3103/s1068375525700322
- Primary Topic
- High Entropy Alloys Studies
- Type
- article
- Field-Weighted Citation Impact
- 0.00