Study of the Resistance and Emission Properties of Films Obtained by Magnetron Sputtering of CrSi2, WSi2, and MoSi2 Targets for Their Possible Application in IR Light Sources

The resistance and emission properties of films obtained on silicon and sitall substrates by direct current magnetron sputtering of CrSi2, WSi2, and MoSi2 targets were investigated. The effect of high-temperature current heating and thermal annealing on the electrical resistivity of the films was studied. It was found that the films obtained by sputtering of WSi2 and MoSi2 targets withstand multiple current pulse heating to a temperature of at least 900°C. The films obtained by sputtering of CrSi2 target are destroyed under the action of the first current pulse when the temperature reaches 700°C. The heat resistances of the films obtained by sputtering of WSi2 and MoSi2 targets during stationary constant thermal heating at a temperature of 800°C in air are 14 min and 6 h, respectively. Heat treatment of all the studied films at a temperature of 900°C for 3 h leads to stabilization of the electrical resistivity of the films. It was determined that the emissivities of the films obtained by sputtering of CrSi2, WSi2, and MoSi2 targets are 0.7, 0.75, and 0.8, respectively. It was found that the films obtained by sputtering of MoSi2 target have optimal properties for use in IR emitters operating at a temperature of 700–800°C.