Evaluation of IGBT Drive Resistance Impact on Near-Field Radiation Based on Time-Frequency Feature Extraction

With the increasing demand for high-performance power electronics in critical applications such as electric drivetrains and grid-tied inverters, electromagnetic interference (EMI) and radiated emissions from power semiconductor devices have attracted significant attention due to their direct impact on electromagnetic compatibility (EMC) certification compliance. Electromagnetic interference from power semiconductor devices demands precise spatiotemporal characterization during switching operations, which is crucial to minimize interference affecting the reliability and efficiency of surrounding electronic systems. This paper proposes a novel near-field radiation analysis methodology integrating wavelet time-frequency analysis with spatial scanning, enabling the extraction of the device-level nearfield radiation characteristics during critical switching transients. Experiments with IGBT modules under varying drive resistances were conducted to verify the characterization effects, which can provide insights for targeted EMI suppression strategies.