Optimized Gate Drive Circuit Design for Improving Dynamic Current Sharing in Bidirectional SSCB Applications
Bidirectional solid state circuit breakers (SSCB) are widely used in DC microgrids for their advantages of fast operation speed and simple circuit structure. SiC MOSFETs are well-suited for using in SSCBs for their high voltage capability and fast switching speed. To increase the current capability, the SiC MOSFETs are usually connected in parallel. Achieving balanced current sharing among parallel MOSFETs is crucial for enhancing the performance and reliability of SSCBs. In this paper, an optimized gate drive circuit is presented to improve the dynamic current sharing of the bidirectional SSCBs when considering the source parasitic inductance in the circuit. In this paper, the simulation results show that the source resistor of 0.5 ohm provides the best trade-off.
Authors
- Paul Evans (ORCID: https://orcid.org/0000-0002-1693-417X)
- Wenlu Yin
- Jun Xie (ORCID: https://orcid.org/0000-0001-7300-1176)
- Alan J. Watson (ORCID: https://orcid.org/0000-0001-6763-5535)
- Asad Fayyaz (ORCID: https://orcid.org/0000-0002-2114-5685)
- Ying Li (ORCID: https://orcid.org/0000-0001-9568-0026)
Institutions
- University of Nottingham (GB)
Publication Details
- Published
- 2025-06-22
- DOI
- https://doi.org/10.1109/pedg62294.2025.11060266
- Primary Topic
- Low-power high-performance VLSI design
- Type
- article
- Field-Weighted Citation Impact
- 0.00