Advantage and Challenge of Electrical Critical Dimension Test Structures for Electroplated High Aspect Ratio Nano Structures (HARNS) on Insulating Materials

Electrical Critical Dimension Test Structures (ECD-TS) have been applied for development of new technology: Metallic High Aspect Ratio Nano Structures (Metal-HARNS). The HARNS refer to electro mechanical structures scaled down to submicron width (as narrow as 260nm confirmed) while keeping its thickness (up to 1500nm confirmed). Two major advantage and challenge have been confirmed through measurement: (1) insulating material showed critical advantage on ECD over Scanning Electron Microscope CD assessment and (2) seed conductive layer affected the measurement as leakage path.

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Published
2025-03-24
DOI
https://doi.org/10.1109/icmts63811.2025.11068934
Citations
1
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
0.73

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article

Advantage and Challenge of Electrical Critical Dimension Test Structures for Electroplated High Aspect Ratio Nano Structures (HARNS) on Insulating Materials

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1 citations
Semiconductor materials and devices
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article

Advantage and Challenge of Electrical Critical Dimension Test Structures for Electroplated High Aspect Ratio Nano Structures (HARNS) on Insulating Materials

Akio Higo, Shun Yasunaga, Yoshio Mita, Etsuko Ohta, Ayako Mizushima, Ryosho Nakane, David Bourrier, Hugues Granier, Yurie Inoue, Noriko Kawai, Amel Beghersa, Tsuboi Shinji
article en
1 citations

Abstract

Electrical Critical Dimension Test Structures (ECD-TS) have been applied for development of new technology: Metallic High Aspect Ratio Nano Structures (Metal-HARNS). The HARNS refer to electro mechanical structures scaled down to submicron width (as narrow as 260nm confirmed) while keeping its thickness (up to 1500nm confirmed). Two major advantage and challenge have been confirmed through measurement: (1) insulating material showed critical advantage on ECD over Scanning Electron Microscope CD assessment and (2) seed conductive layer affected the measurement as leakage path.

Centre National de la Recherche Scientifique (FR), Tokyo University of Information Sciences (JP), Laboratoire d'Analyse et d'Architecture des Systèmes (FR), Systems Biology Institute (JP)
Ministry of Education
Openalex Percentile: Top 26%
Semiconductor materials and devices
0.73
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