A Novel Separated Source Electrodes Kelvin (SSEK) Structure for Extracting Channel Mobility in the 4H-SiC VDMOSFET
A novel Separated Source Electrodes Kelvin (SSEK) structure is proposed to effectively eliminate most of the series resistance in a VDMOSFET, enabling accurate channel mobility extraction. By utilizing the SSEK structure, we can separately measure the resistance of the left and right channels, thereby achieving more precise channel mobility extraction and effectively evaluating process improvements for vertical power MOSFETs.
Authors
- Yi‐Kai Hsiao (ORCID: https://orcid.org/0009-0005-7985-9188)
- Bing‐Yue Tsui (ORCID: https://orcid.org/0000-0003-2963-8211)
- Chia-Lung Hung
- Wenshu Chen (ORCID: https://orcid.org/0000-0003-0990-4172)
- A. Li
Institutions
- National Yang Ming Chiao Tung University (TW)
Publication Details
- Published
- 2025-03-24
- DOI
- https://doi.org/10.1109/icmts63811.2025.11068902
- Citations
- 1
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.73
Funders
- National Science and Technology Council