A new test structure for charge pumping current measurement in vertical Si power device

We propose a novel test structure for charge pumping current (I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">cp</inf>) measurement to estimate the interface state density at gate insulator/Si substrate in vertical Si power MOSFET. In this structure, the source and base of that are separated by modifying the layout of implantation and trench contact, without requiring additional process steps.